ROHM has developed the TSC3PAK (14.00 × 18.58 × 3.50mm) package for SiC MOSFETs. By adopting a top-side heat dissipation structure that places the heat dissipation surface on the top of the package. The new product enables automated mounting while achieving heat dissipation performance comparable to that of conventional through-hole packages (TO-247-4L). This contributes to greater efficiency and reliability in power conversion circuits for Onboard Chargers (OBCs) and electric compressors used in xEVs (Electric Vehicles). Mass production of the product has started in June 2026.
In xEVs, the adoption of SiC devices is expanding beyond main inverters to include power conversion circuits such as OBCs and electric compressors to improve charging speed and extend cruising range. SiC devices are also increasingly being used in industrial equipment, including high-performance server power supplies and PV inverters, where high-efficiency operation is required.
Conventional SiC devices have generally relied on through-hole packages, which provide excellent heat dissipation during high-power operation. However, through-hole type devices involve manual mounting processes, and their form factor makes it difficult to achieve a lower package profile. Against this backdrop, surface-mount SiC devices compatible with automated mounting have begun gaining adoption. To address these issues, the new TSC3PAK delivers heat dissipation performance comparable to through-hole technology such as TO-247 in a surface-mount package.
